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triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA2503 1 oct 2008 ? rev - 13 - 17 ghz 2 watt, 32db power amplifier key features and performance ? 33 dbm midband pout ? 32 db nominal gain ? 10 db typical return loss ? built-in directional power detector with reference ? 0. 50 m phemt technology ? bias conditions: 7 v, 680ma ? chip dimensions: 2.5 x 1.4 x 0.1 mm (98 x 55 x 4 mils) preliminary measured data bias conditions: vd=7 v id= 680ma primary applications ? vsat ? point-to-point 10 15 20 25 30 35 40 11 12 13 14 15 16 17 18 19 frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 5 return loss (db) s21 s11 s22 25 26 27 28 29 30 31 32 33 34 35 11 12 13 14 15 16 17 18 19 frequency (ghz) psat (dbm) 10 15 20 25 30 35 40 45 50 55 60 pae@psat (%) psat pae note: datasheet is subject to change without notic e. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA2503 2 oct 2008 ? rev - 2 / 21 dbm input continuous wave power pin 200 c channel temperature tchannel -18 to 18 ma gate current range ig 2 / 1300 ma drain current id -5 to 0 v gate voltage range vg 2 / 8 v drain voltage vd 13 v drain to gate voltage vd-vg notes value parameter symbol table i absolute maximum ratings 1 / 1 / these ratings represent the maximum operable val ues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and/or affect device lifetime. these are stress ratings only, and funct ional operation of the device at these conditions i s not implied. 2 / combinations of supply voltage, supply current, in put power, and output power shall not exceed the maximum power dissipation listed in table iv. -0.6 v gate voltage vg 1200 ma drain current under rf drive id_drive 680 ma drain current idq 7 v drain voltage vd value parameter symbol table ii recommended operating conditions www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA2503 3 oct 2008 ? rev - table iii rf characterization table (t a = 25 c, nominal) (vd = 7 v, id = 680 ma 5%) limits symbol parameter test condition min typ max units gain small signal gain f = 13-17 32 db irl input return loss f = 13-17 10 db orl output return loss f = 13-17 10 db pwr output power @ pin = +5 dbm f = 13-17 33 dbm note: table iii lists the rf characteristics of t ypical devices as determined by fixtured measurements. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA2503 4 oct 2008 ? rev - table iv power dissipation and thermal properties -65 to 150 c storage temperature 320 c 30 seconds mounting temperature jc = 11.7 c/w tchannel = 145 c tm = 1.6e+6 hrs vd = 7 v id = 1200 ma pout = 33 dbm pd = 6.4 w tbaseplate = 70 c thermal resistance, jc under rf drive jc = 11.7 c/w tchannel = 126 c tm = 8.7e+6 hrs vd = 7 v id = 680 ma pd = 4.76 w tbaseplate = 70 c thermal resistance, jc pd = 10.4 w tchannel = 192 c tbaseplate = 70 c maximum power dissipation value test conditions parameter median lifetime (tm) vs. channel temperature 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 1.e+13 25 50 75 100 125 150 175 200 channel temperature ( c) median lifetime (hours) fet3 www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA2503 5 oct 2008 ? rev - typical fixtured performance 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 11 12 13 14 15 16 17 18 19 frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 11 12 13 14 15 16 17 18 19 frequency (ghz) s11,s22 (db) s11 s22 www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA2503 6 oct 2008 ? rev - typical fixtured performance 30 30.5 31 31.5 32 32.5 33 33.5 34 34.5 35 11 12 13 14 15 16 17 18 19 frequency (ghz) pout (dbm) psat p2db 10 15 20 25 30 35 40 11 12 13 14 15 16 17 18 19 frequency (ghz) pae (%) psat p2db www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA2503 7 oct 2008 ? rev - typical fixtured performance 17 19 21 23 25 27 29 31 33 35 37 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 input power (dbm) output power (dbm) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 id (a) 13.5 ghz 14.0 ghz 14.5 ghz www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA2503 8 oct 2008 ? rev - -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 5 10 15 20 25 30 35 pout / tone (dbm) imd3 (dbm) 13 ghz 14 ghz 15 ghz typical fixtured performance 35 36 37 38 39 40 41 42 43 44 45 12 13 14 15 16 17 18 frequency (ghz) ip3 (dbm) www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA2503 9 oct 2008 ? rev - mechanical drawing www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA2503 10 oct 2008 ? rev - power detector 40 k ? 40 k ? +5 v vdet vref 50 ? rf out dut 5pf mmic external TGA2503 power detector @ 14ghz 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 60 sqrt pout (mw^0.5) vref-vdet (v) (20 dbm) (26 dbm) (29.5 dbm) (32 dbm) (34 dbm) www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA2503 11 oct 2008 ? rev - chip assembly & bonding diagram gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. 100 pf vg input tfn output tfn 100 pf vd off chip r=10 ? off chip c=0.1 ? f off chip r=10 ? off chip c=0.1 ? f www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com TGA2503 12 oct 2008 ? rev - gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. assembly process notes reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to t emperatures at or above 300 c. (30 seconds maximum) ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is criti cal for long-term reliability. ? devices must be stored in a dry nitrogen atmospher e. component placement and adhesive attachment assembl y notes: ? vacuum pencils and/or vacuum collets are the prefe rred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement . ? organic attachment can be used in low-power applic ations. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used bec ause of differential heating. ? coefficient of thermal expansion matching is criti cal. interconnect process assembly notes: ? thermosonic ball bonding is the preferred intercon nect technique. ? force, time, and ultrasonics are critical paramete rs. ? aluminum wire should not be used. ? discrete fet devices with small pad sizes should b e bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c. ordering information gaas mmic die TGA2503 package style part www.datasheet.net/ datasheet pdf - http://www..co.kr/

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